brand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channel
  • brand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channel
  • brand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channel
  • brand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channel
  • brand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channel
  • brand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channel
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brand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channel

Price: ￥ 0.4 ≈ 0.06
Domestic Shipping: ￥14 ≈ 2.07
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  • brand: Shenzhen Jinhongtai
    model: IRF640N
    encapsulation: TO-220
    Batch number: IRF640N
    FET type: Consulting customer service
    Drain source voltage (VDSS): standard
    Drain current (ID): standard
    Drain source on resistance (RDS on): standard
    Gate source voltage (VGS): standard
    Gate charge (QG): Consulting customer service
    Reverse recovery time: Consulting customer service
    Maximum dissipation power: Consulting customer service
    Configuration type: Direct insertion
    Operating temperature range: standard
    Installation type: Direct insertion
    application area : Household Electric Appliances
    Article number: IRF640N
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    brand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channel
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Price: ￥ 0.4 ≈ 0.06
Domestic Shipping: ￥14 ≈ 2.07
brand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channel

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view at 1688
brand:Shenzhen Jinhongtai
model:IRF640N
encapsulation:TO-220
Batch number:IRF640N
FET type:Consulting customer service
Drain source voltage (VDSS):standard
Drain current (ID):standard
Drain source on resistance (RDS on):standard
Gate source voltage (VGS):standard
Gate charge (QG):Consulting customer service
Reverse recovery time:Consulting customer service
Maximum dissipation power:Consulting customer service
Configuration type:Direct insertion
Operating temperature range:standard
Installation type:Direct insertion
application area :Household Electric Appliances
Article number:IRF640N
brand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channelbrand new Original IRF640N encapsulation TO-220 18A 200V Field effect transistor MOS FET N channel

  • Items that cannot be shipped through mail

  • 1. Items forbidden to be circulated or shipped according to the national law.

  • 2. Explosive, flammable, erosive, radioactive or toxic hazardous items.

  • 3. Publications, books, sources or items containing reactionary content or obscenity.

  • 4. Currencies of all kinds.

  • 5. Items that violate public health.

  • 6. Items that rot easily.

  • 7. Live animals (not counting bees, silkworms and leeches, as long as the packaging ensures the safety of the workers).

  • 8. Items that are not adequately packaged and may cause hazards to the workers, or contaminate or damage other packages.

  • 9. Other items unsuitable for shipment though mail.

  • Shipping Method
  • Delivery Time
  • Shipment Feature
After Sale Service:

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￥0.4 ≈ 0.06
Domestic Shipping: ￥14 ≈ $2.07
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